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| to-92 plastic-encapsulate transistors 2SC5343 transistor (npn) features z excellent h fe linearity : h fe (2)=100(typ) at v ce =6v,i c =150ma : h fe (i c =0.1ma)/ h fe (i c =2ma)=0.95(typ). z low noise: nf=10db(typ). at f=1kh z . maximum ratings (t a =25 unless otherwise noted) symbol parameter value unit v cbo collector-base voltage 60 v v ceo collector-emitter voltage 50 v v ebo emitter-base voltage 5 v i c collector current -continuous 150 ma p c collector power dissipation 625 mw t j junction temperature 150 t stg storage temperature -55-150 electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions m in t yp max u nit collector-base breakdown voltage v (br)cbo i c = 100 a,i e =0 60 v collector-emitter breakdown voltage v (br)ceo i c = 10 ma,i b =0 50 v emitter-base breakdown voltage v (br)ebo i e = 10 a,i c =0 5 v collector cut-off current i cbo v cb = 60 v,i e =0 0.1 a emitter cut-off current i ebo v eb = 5 v,i c =0 0.1 a dc current gain h fe v ce = 6 v,i c = 2 ma 70 700 collector-emitter saturation voltage v ce(sat) i c = 100 ma,i b = 10 ma 0.1 0.25 v transition frequency f t v ce = 10 v,i c = 1 ma 80 mhz collector output capacitance c ob v cb = 10 v,i e =0,f= 1 mhz 3.5 pf noise figure nf v ce = 6 v,i c = 0.1 ma, f= 1k hz,rg= 10 k 10 db classification of h fe rank o y g l range 70-140 120-240 200-400 300-700 to-92 1. emitter 2. collector 3. base 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification a,may,2011
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